HEEPatia

HEEPatia

Features: HEEPatia implements a dual-core X-HEEP platform, integrating:

  • CV32E40P core
  • CV32E40PX core extended with the Coprosit coprocessing unit for posit arithmetic

The system contains 608 kB of on-chip memory, comprising:

  • 352 kB of SRAM shared across the MCU and IP blocks
  • 256 kB of Gain-Cell Random Access Memory (GC-RAM)

The chip is implemented using a mixture of LVT (Low-Voltage Threshold) and SVT (Standard-Voltage Threshold) standard cells to explore performance-power trade-offs in advanced CMOS technology.

Design: Beyond its dual-core MCU platform, HEEPatia integrates multiple heterogeneous accelerators designed to improve performance and energy efficiency for edge-AI workloads.

These include:

  • Two Carus near-memory computing accelerators
  • The DISCO (DomaIn-specific System-technology CO-design) CGRA, based on the VWR2A architecture

Application: HEEPatia serves as a research platform for evaluating performance, power, and area (PPA) trade-offs across different hardware IP blocks within a modern 16 nm technology node.

By combining advanced IP blocks within a unified X-HEEP framework, HEEPatia provides a flexible testbed for future embedded and edge computing research.

HEEPatia

Fabrication:

  • Technology node: TSMC 16 nm
  • Tape-out: July 2025
  • Platform: X-HEEP

Design Team: HEEPatia is the first silicon implementation of X-HEEP fabricated in TSMC 16 nm technology. The chip was taped out in July 2025 as part of a collaboration between the EPFL Embedded Systems Laboratory (ESL), the Telecommunication Circuits Laboratory (TCL) at EPFL, and Politecnico di Torino.

In particular: Lara Orlandic / EPFL, David Mallasén / EPFL, Michele Caon / EPFL, Luigi Giuffrida / Politecnico di Torino, ,Alexandre Levisse / EPFL, Davide Schiavone / EPFL, Christoph Thomas Müller / EPFL, David Atienza / EPFL, Andreas Burg / EPFL.

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