HEEPnosis

HEEPnosis Test Chip layout in GF 22nm FDX

Features:  The chip implements X-HEEP configured with a CV32E2 CPU and integrates 128 kB of on-chip memory, organized into four 32 kB banks (two contiguous banks and two interleaved banks). 

The peripheral set includes: two DMA controllers, SPI interface, GPIOs, UART, and JTAG.

Clock generation is provided by an FLL (Frequency Locked Loop) derived from the PULP project.

HEEPnosis integrates multiple near-memory and experimental hardware components, including: Caesar near-memory macro, Maxwell near-memory macro, and Wukong peripheral.

Design: HEEPnosis is fabricated in GF 22 nm FDX technology, using a mix of:

  • LVT (Low-Voltage Threshold) cells
  • HVT (High-Voltage Threshold) cells
  • UHVT (Ultra-High-Voltage Threshold) cells

Application: HEEPnosis serves as a validation platform for:

  • Functionality and efficiency of full-custom blocks designed using logic suppression techniques
  • Performance of integrated near-memory macros

As testing is currently ongoing, no published silicon measurement results are available yet.

HEEPnosis

Fabrication:

  • Technology node: GlobalFoundries 22 nm FDX
  • Tape-out: February 2025
  • Platform: X-HEEP

Design team: HEEPnosis is the second silicon implementation of the X-HEEP platform. It was developed through a collaboration between the Embedded Systems Laboratory (ESL) and the Telecommunication Circuits Laboratory (TCL) at EPFL.

In particular: Clement Chone / EPFL, Gregoire Eggermann / EPFL, Pengbo Yu / EPFL, Leslie Xu / CSEM/ EPFL, Filippo Quadri / EPFL, Alexandre Levisse / EPFL, Davide Schiavone / EPFL, Christoph Thomas Müller / EPFL, David Atienza / EPFL, Andreas Burg / EPFL.

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