HEEPnosis
Features: The chip implements X-HEEP configured with a CV32E2 CPU and integrates 128 kB of on-chip memory, organized into four 32 kB banks (two contiguous banks and two interleaved banks).
The peripheral set includes: two DMA controllers, SPI interface, GPIOs, UART, and JTAG.
Clock generation is provided by an FLL (Frequency Locked Loop) derived from the PULP project.
HEEPnosis integrates multiple near-memory and experimental hardware components, including: Caesar near-memory macro, Maxwell near-memory macro, and Wukong peripheral.
Design: HEEPnosis is fabricated in GF 22 nm FDX technology, using a mix of:
- LVT (Low-Voltage Threshold) cells
- HVT (High-Voltage Threshold) cells
- UHVT (Ultra-High-Voltage Threshold) cells
Application: HEEPnosis serves as a validation platform for:
- Functionality and efficiency of full-custom blocks designed using logic suppression techniques
- Performance of integrated near-memory macros
As testing is currently ongoing, no published silicon measurement results are available yet.
Fabrication:
- Technology node: GlobalFoundries 22 nm FDX
- Tape-out: February 2025
- Platform: X-HEEP
Design team: HEEPnosis is the second silicon implementation of the X-HEEP platform. It was developed through a collaboration between the Embedded Systems Laboratory (ESL) and the Telecommunication Circuits Laboratory (TCL) at EPFL.
In particular: Clement Chone / EPFL, Gregoire Eggermann / EPFL, Pengbo Yu / EPFL, Leslie Xu / CSEM/ EPFL, Filippo Quadri / EPFL, Alexandre Levisse / EPFL, Davide Schiavone / EPFL, Christoph Thomas Müller / EPFL, David Atienza / EPFL, Andreas Burg / EPFL.